Part Number Hot Search : 
10040 1003F 15D60KG N5392 FJ256 SDA5254 MM74H DB105
Product Description
Full Text Search

SUB60N04-15L - 0.015 ohm, POWER, FET Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode

SUB60N04-15L_7700362.PDF Datasheet


 Full text search : 0.015 ohm, POWER, FET Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode


 Related Part Number
PART Description Maker
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
NEC[NEC]
STD29NF03LT4 N-CHANNEL 30V - 0.015 OHM - 29A IPAK/DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET
ST Microelectronics
SQM50P06-15L-GE3 50 A, 60 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
VISHAY SILICONIX
RJJ0601JPN-00-02 90 A, 60 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB SC-46, 3 PIN
Panduit, Corp.
MTD20N03HDL MTD20N03HL 20N03HL HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
MOTOROLA[Motorola, Inc]
Motorola, Inc.
IRF8010S IRF8010SPBF 75 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
High frequency DC-DC converters
International Rectifier
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
MTD5P06V ON2511 MTD5P06V-T4 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
From old datasheet system
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MTP23P06V ON2569 TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
SUB60N04-15L Rail SUB60N04-15L Data SUB60N04-15L schematic SUB60N04-15L reserved SUB60N04-15L module
SUB60N04-15L prezzo baumer SUB60N04-15L Vbe(on) SUB60N04-15L filetype:pdf SUB60N04-15L 13MHz SUB60N04-15L samsung
 

 

Price & Availability of SUB60N04-15L

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.90256500244141